Effect of radio‐frequency power and substrate temperature on properties of hot‐plasma‐box glow‐discharge‐deposited hydrogenated amorphous silicon carbon alloys-Reference-Cited by-同舟云学术

Effect of radio‐frequency power and substrate temperature on properties of hot‐plasma‐box glow‐discharge‐deposited hydrogenated amorphous silicon carbon alloys

Published:1993-02-15 Issue:4 Volume:73 Page:1743-1749
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bhusari D. M.,Kshirsagar S. T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.353209

Reference28 articles.

1. Present and future applications of amorphous silicon and its alloys

2. Influence of rf power on the properties of hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputtering of silicon in methane‐argon gas mixtures

3. Effect of rf power on the structure and related gap states in hydrogenated amorphous silicon

4. Influence of sputtering pressure on the properties of hydrogenated amorphous‐silicon carbon alloy films prepared by magnetron sputtering of silicon in methane‐argon gas mixtures

5. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell

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