Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4944060
Reference16 articles.
1. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
2. Fermi-level pinning and charge neutrality level in germanium
3. Nanocrystal-based Ohmic contacts on n and p-type germanium
4. Recent advances in Schottky barrier concepts
5. Fermi Level Depinning Failure for Al/GeO2/Ge Contacts
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