Tunable optical and electrical properties of thermal and plasma-enhanced atomic layer deposited Si-rich SixTi1−xO2 thin films
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
2. Applied Materials India Pvt. Ltd, Mumbai 400076, India
Funder
Applied Materials India Pvt. Ltd.
Department of Science and Technology, Government of India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0028991
Reference39 articles.
1. High dielectric constant oxides
2. Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology
3. Fabrication and characterization of robust through-silicon vias for silicon-carrier applications
4. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization
5. High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal–Organic Silicon Precursor and Oxygen Radical
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