Characterization of the ScAlMgO4 cleaving layer by X-ray crystal truncation rod scattering-Reference-Cited by-同舟云学术

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Characterization of the ScAlMgO4 cleaving layer by X-ray crystal truncation rod scattering

Published:2018-05-28 Issue:20 Volume:123 Page:205305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hanada Takashi¹,Tajiri Hiroo²,Sakata Osami³^ORCID,Fukuda Tsuguo⁴,Matsuoka Takashi¹

Affiliation:

1. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

2. Japan Synchrotron Radiation Research Institute (JASRI), Hyogo 679-5198, Japan

3. Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan

4. Fukuda Crystal Laboratory, Sendai 989-3204, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5031024

Reference26 articles.

1. Structural classification ofRAO3(MO)n compounds (R =Sc, In, Y, or lanthanides; A =Fe(III), Ga, Cr, or Al; M =divalent cation; n = 1–11)

2. High-pressure study of substrate material ScAlMgO4

3. High-temperature thermal expansion of ScAlMgO4 for substrate application of GaN and ZnO epitaxial growth

4. Erratum: “High-temperature thermal expansion of ScAlMgO4for substrate application of GaN and ZnO epitaxial growth”

5. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4(0001) substrate with millimeter-scale wide terraces

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micro/Nanomechanical Characterization of ScAlMgO4 Single Crystal by Instrumented Indentation and Scratch Methods;Materials;2024-08-02

2. Growth of Nitrides on Nearly Lattice-Matched Substrate ScAlMgO₄ and its Application;2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2023-11-16

3. Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO₄ by Radio‐Frequency Molecular Beam Epitaxy;physica status solidi (b);2023-04-19

4. High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates;AIP Advances;2023-04-01

5. Properties of ScAlMgO4 as Substrate for Nitride Semiconductors;Crystals;2023-03-04

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