Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4(0001) substrate with millimeter-scale wide terraces-Reference-Cited by-同舟云学术

Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4(0001) substrate with millimeter-scale wide terraces

Published:2016-12-27 Issue:9 Volume:214 Page:1600754
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Iwabuchi Takuya¹,Kuboya Shigeyuki¹,Tanikawa Tomoyuki¹,Hanada Takashi¹,Katayama Ryuji¹,Fukuda Tsuguo²,Matsuoka Takashi¹

Affiliation:

1. Institute for Materials Research; Tohoku University; 2-1-1 Katahira Aoba-ku 980-8577 Sendai Japan

2. Fukuda Crystal Laboratory; 6-6-3 Minami-Yoshinari Aoba-ku 989-3204 Sendai Japan

Funder

Murata Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

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4. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

5. T. Matsuoka T. Ishii 1 11 2000

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