A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices-Reference-Cited by-同舟云学术

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

Published:2021-11-01 Issue:11 Volume:9 Page:111109
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Cox Horatio R. J.¹^ORCID,Buckwell Mark²^ORCID,Ng Wing H.¹^ORCID,Mannion Daniel J.¹^ORCID,Mehonic Adnan¹^ORCID,Shearing Paul R.²^ORCID,Fearn Sarah³^ORCID,Kenyon Anthony J.¹^ORCID

Affiliation:

1. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom

2. Department of Chemical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom

3. Department of Materials, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0070046

Reference41 articles.

1. Polymer–ultrathin graphite sheet–polymer composite structured flexible nonvolatile bistable organic memory devices

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

4. Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x

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