Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x-Reference-Cited by-同舟云学术

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Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x

Published:2017-12-06 Issue:1 Volume:4 Page:1700458
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lübben Michael¹²^ORCID,Wiefels Stefan¹²,Waser Rainer¹²³^ORCID,Valov Ilia²³^ORCID

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik 2; RWTH Aachen University; Sommerfeldstraße 24 52074 Aachen Germany

2. JARA - Fundamentals for Future Information Technology; 52425 Jülich Germany

3. Peter Grünberg Institut; Forschungszentrum Jülich; Wilhelm-Johnen-Straße 52425 Jülich Germany

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201700458/fullpdf

Reference18 articles.

1. Memristive devices for computing

2. Resistive Switching

3. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

4. Nanoionics-based resistive switching memories

5. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

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2. Synaptic and resistive switching behaviors of Sm‐doped HfO₂ films for bio‐inspired neuromorphic calculations;International Journal of Applied Ceramic Technology;2024-02

3. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

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