Surface Al doping of 4H-SiC via low temperature annealing
Author:
Affiliation:
1. Electronics and Telecommunication Research Institute (ETRI), Daejeon 305-700, South Korea
2. Department of Electronic Material Engineering, Kwangwoon University, Seoul 139-701, South Korea
Funder
Institute for Information & Communications Technololgy Promotion
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4958841
Reference22 articles.
1. T. Kimoto and J. A. Cooper ,Fundamentals of Silicon Carbide Technology( Wiley-IEEE Press, 2015), pp. 1–538.
2. Ion implantation range distributions in silicon carbide
3. Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC
4. Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
5. Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density
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1. Selective Doping in Silicon Carbide Power Devices;Materials;2021-07-14
2. Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC;Journal of Nanoscience and Nanotechnology;2021-03-01
3. A new approach to regulate the photoelectric properties of two-dimensional SiC materials: first-principles calculation on B-N co-doping;Optoelectronics Letters;2020-05
4. Electrical properties of Al/Al 4 C 3 /4H-SiC diodes;Materials Science in Semiconductor Processing;2018-02
5. Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode;Applied Physics Letters;2017-04-03
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