Inhibition of In desorption in diluted nitride InAsN quantum dots-Reference-Cited by-同舟云学术

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Inhibition of In desorption in diluted nitride InAsN quantum dots

Published:2011-02-14 Issue:7 Volume:98 Page:071910
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Reyes D. F.,González D.,Sales D. L.,Gargallo-Caballero R.,Guzmán A.,Ulloa J. M.,Hierro A.

Funder

Spanish Ministry of Science and Innovation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3554386

Reference15 articles.

1. Interplay between Thermodynamics and Kinetics in the Capping ofInAs/GaAs(001)Quantum Dots

2. Shape transition during epitaxial growth ofInAsquantum dots onGaAs(001): Theory and experiment

3. Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

4. Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k·p approach;Materials Science in Semiconductor Processing;2022-09

2. Optical characterization of Nitrided InAs/GaAs quantum dots grown by MBE;Journal of Materials Science: Materials in Electronics;2021-08-11

3. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots;Solar Energy Materials and Solar Cells;2016-02

4. Evaluation of the In desorption during the capping process of diluted nitride In(Ga)As quantum dots;Journal of Physics: Conference Series;2011-11-09

5. Dilute-nitride GaInAsN/GaAs site-controlled pyramidal quantum dots;Applied Physics Letters;2011-10-31

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