Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2099533
Reference18 articles.
1. Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy
2. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
3. Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots
4. Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots
5. Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy
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