Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1578709
Reference18 articles.
1. Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
2. Structural and chemical investigation ofIn0.6Ga0.4AsStranski-Krastanow layers buried in GaAs by transmission electron microscopy
3. Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
4. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
5. Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots
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