Dilute-nitride GaInAsN/GaAs site-controlled pyramidal quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3657770
Reference22 articles.
1. GaInNAs long-wavelength lasers: progress and challenges
2. High-power (200 mW) singlemode operation of InGaAsN∕GaAs ridge waveguide lasers with wavelength around 1.3 [micro sign]m
3. Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix
4. Effects of strain and confinement on the emission wavelength of InAs quantum dots due to aGaAs1−xNxcapping layer
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