Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2919053
Reference17 articles.
1. High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy
2. Low-threshold GaInNAs single-quantum-well lasers with emission wavelength over 1.3 [micro sign]m
3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
4. Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition
5. The Stoichiometry of InAs Quantum Dots Determined by Cross-Sectional Scanning Tunneling Microscopy
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1. Annihilation of arsenic-nitrogen bonding defects in annealed InAs1−xNx quantum dots grown through nitrogen background pressure–controlled SS-MBE;Journal of Alloys and Compounds;2017-10
2. General route for the decomposition of InAs quantum dots during the capping process;Nanotechnology;2016-02-18
3. Self-organized Formation and XSTM-Characterization of GaSb/GaAs Quantum Rings;Physics of Quantum Rings;2013-08-29
4. Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale;Applied Physics Letters;2013-03-25
5. Dilute-nitride GaInAsN/GaAs site-controlled pyramidal quantum dots;Applied Physics Letters;2011-10-31
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