Shape transition during epitaxial growth ofInAsquantum dots onGaAs(001): Theory and experiment-Reference-Cited by-同舟云学术

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Shape transition during epitaxial growth ofInAsquantum dots onGaAs(001): Theory and experiment

Published:2006-05-31 Issue:20 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kratzer P.,Liu Q. K. K.,Acosta-Diaz P.,Manzano C.,Costantini G.,Songmuang R.,Rastelli A.,Schmidt O. G.,Kern K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.205347/fulltext

Reference49 articles.

1. Nonuniform Composition Profile inIn0.5Ga0.5AsAlloy Quantum Dots

2. Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots

3. Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction

4. Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

5. Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

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2. Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics;Photonics;2024-04-15

3. Statistical Analysis of the Spatial Distribution of Mbe Grown Inas Quantum Dots on Gaas(100);2024

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