X‐ray study of low‐temperature annealed arsenic‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335638
Reference16 articles.
1. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
2. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
3. Influence of thermal history on the residual disorder in implanted <111> silicon
4. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
5. The influence of high implant concentration on solid phase epitaxial regrowth in (100) and (111) silicon
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