Evaluation of strain induced by implantation in SOI materials
Author:
Affiliation:
1. GES, Université Montpellier II, cc 074, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
2. SPMS, Ecole Centrale Paris, 92295 Châtenay‐Malabry Cedex, France
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306240
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4. Lattice strain from substitutional Ga and from holes in heavily doped Si:Ga
5. Kinematical x‐ray diffraction in nonuniform crystalline films: Strain and damage distributions in ion‐implanted garnets
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