Comparison of the damage and contamination produced by CF4and CF4/H2reactive ion etching: The role of hydrogen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96452
Reference7 articles.
1. Silicon Damage Caused by Hydrogen Containing Plasmas
2. Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2
3. In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges
4. Silicon Damage Caused by Hydrogen Containing Plasmas
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