Determination of the azimuthal orientational spread of GaN films by x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1531832
Reference11 articles.
1. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
2. Analysis of the Defect Structure of Epitaxial GaN
3. Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering
4. Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy
5. Angle calculations for 3- and 4-circle X-ray and neutron diffractometers
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