Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121511
Reference18 articles.
1. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. GaN Growth Using GaN Buffer Layer
5. Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
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2. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz;Reports on Progress in Physics;2017-09-01
3. Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals;Applied Physics Letters;2014-08-04
4. Controlling of the Electrical Resistivity of GaN Layer Using AlN Nucleation Layer;Journal of Nanoscience and Nanotechnology;2011-08-01
5. Structural evolution of GaN layers grown on (0001) sapphire by hydride vapor phase epitaxy;Journal of Crystal Growth;2011-07
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