Thermally robust synthetic antiferromagnetic fixed layers containing FeCoB for use in STT-MRAM devices
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories
2. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
3. MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis
4. Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs
5. Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
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1. Energy landscape of noncollinear exchange coupled magnetic multilayers;Physical Review B;2024-06-17
2. Magnetic Field Direction Dependent Magnetization Reversal in Synthetic Antiferromagnets Based on First-Order Reversal Curve Analysis;2024
3. Computational assessment of possible origins of the back-hopping effect in magnetic tunnel junctions;Physical Review B;2023-07-26
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