Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=11/a=113006/pdf
Reference27 articles.
1. High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
2. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
3. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
4. 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
5. Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier
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