Antiferromagnetic coupling in ferrimagnetic Mn4N-based bilayer structures

Author:

Yasuda Tomohiro1ORCID,Ogawa Daisuke2ORCID,Amemiya Kenta3ORCID,Suemasu Takashi4ORCID

Affiliation:

1. Degree Programs in Pure and Applied Sciences, Graduate School of Science and Technology, University of Tsukuba 1 , Tsukuba, Ibaraki 305-8573, Japan

2. Elements Strategy Initiative Center for Magnetic Materials, National Institute for Materials Science 2 , Tsukuba, Ibaraki 305-0047, Japan

3. Institute of Materials Structure Science, KEK 3 , Tsukuba 305-0801, Japan

4. University of Tsukuba, Institute of Pure and Applied Sciences, Department of Applied Physics 4 , Tsukuba, Ibaraki 305-8573, Japan

Abstract

Mn4N/(Mn,Cu)4N epitaxial bilayer structures with (Mn,Cu)4N compositions below and above the magnetization compensation composition were prepared on SrTiO3(001) substrates by molecular beam epitaxy. The thickness of the (Mn,Cu)4N layer was fixed at approximately 20 nm, while that of the Mn4N layer was changed from 7.5 to 19.6 nm. Cross-sectional elemental mapping proved that the diffusion of Cu from the (Mn,Cu)4N layer to the Mn4N layer was negligible. The magnetization curves showed that the magnetic moments of Mn4N and (Mn,Cu)4N were antiferromagnetically coupled, independent of the Mn4N film thickness, indicating a synthetic ferrimagnetic structure. The dependence of magnetic order on Mn4N film thickness was confirmed by surface-sensitive measurements using polar magneto-optical Kerr effect and x-ray magnetic circular dichroism. This is due to the change in the layer with dominant magnetization and the strength of the antiferromagnetic coupling. The temperature dependence of the anomalous Hall effect showed that the antiferromagnetic coupling was retained in the Mn4N(7.5 nm)/(Mn,Cu)4N(22.4 nm) structure over a wide temperature range of 10–350 K.

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

AIP Publishing

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