Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications-Reference-Cited by-同舟云学术

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

Published:2021-07-26 Issue:4 Volume:119 Page:043501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zaslavsky A.¹²^ORCID,Richter C. A.²,Shrestha P. R.²³,Hoskins B. D.²,Le S. T.²³,Madhavan A.²⁴,McClelland J. J.²^ORCID

Affiliation:

1. School of Engineering, Brown University, Providence, Rhode Island 02912, USA

2. Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA

3. Theiss Research, La Jolla, California 92037, USA

4. University of Maryland, College Park, Maryland 20742, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0060343

Reference17 articles.

1. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

2. A cryogenic CMOS chip for generating control signals for multiple qubits

3. Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

4. Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

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