Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K-Reference-Cited by-同舟云学术

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Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

Published:2018 Issue: Volume:6 Page:1007-1018
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Beckers Arnout^ORCID,Jazaeri Farzan^ORCID,Enz Christian^ORCID

Funder

European Union’s Horizon 2020 Research and Innovation Programme through MOS-Quito

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8232486/08326483.pdf?arnumber=8326483

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