Abstract
This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference69 articles.
1. See the 2021 International Roadmap for Devices and Systems, Specifically the More Moore Section
https://irds.ieee.org/images/files/pdf/2021/2021IRDS_MM.pdf
2. Fundamentals of Modern VLSI Devices;Taur,2021
3. Fully Depleted Silicon-On-Insulator: Nanodevices, Mechanisms and Characterization;Cristoloveanu,2021
4. Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
5. Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures
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