Insights into radiation displacement defect in an insulated-gate bipolar transistor-Reference-Cited by-同舟云学术

Insights into radiation displacement defect in an insulated-gate bipolar transistor

Published:2021-02-01 Issue:2 Volume:11 Page:025137
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kim Kihyun¹²,Kim Jungsik³⁴^ORCID

Affiliation:

1. Division of Electronics Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea

2. Future Semiconductor Convergence Technology Research Center and ICT Convergence Research Center, Jeonbuk National University, Jeonju 54896, Republic of Korea

3. Department of Electrical Engineering, Gyeongsang National University, Jinju 52828, Republic of Korea

4. Engineering Research Institute (ERI), Gyeongsang National University, Jinju 52828, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0041444

Reference25 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. The ambipolar transport behavior of WSe2 transistors and its analogue circuits

3. Screening fermi-level pinning effect through van der waals contacts to monolayer MoS2

4. Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

5. Advanced IGBT modules for railway traction applications: Reliability testing

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