Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan
Funder
Super Cluster Program
Program on Open Innovation Platform with Enterprises, Research Institute and Academia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0013240
Reference39 articles.
1. Power semiconductor device figure of merit for high-frequency applications
2. Fundamentals of Silicon Carbide Technology
3. Advances in SiC MOS Technology
4. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC
5. Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
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2. Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2023-11-01
3. High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3;Applied Physics Express;2023-07-01
4. Mobility degradation under a high effective normal field in an inversion layer of 4H-SiC (0001) metal–oxide–semiconductor structures annealed in POCl3;Applied Physics Express;2022-11-30
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