Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Published:2015-08 Issue:8 Volume:62 Page:2562-2570
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Uhnevionak Viktoryia¹,Burenkov Alexander¹,Strenger Christian¹,Ortiz Guillermo²,Bedel-Pereira Elena²,Mortet Vincent³,Cristiano Fuccio²,Bauer Anton J.¹,Pichler Peter¹^ORCID

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany

2. Laboratoire d’Analyse et d’Architecture des Systèmes–Centre National de la Recherche Scientifique, Toulouse, France

3. Academy of Sciences of the Czech Republic, Prague, Czech Republic

Funder

Program Inter Carnot Fraunhofer

Bundesministerium für Bildung und Forschung

Agence Nationale de la Recherche, as well as by the RENATECH French National Nanofabrication Network

Academy of Sciences of the Czech Republic via the J. E. Purkyně Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7163647/07163690.pdf?arnumber=7163690

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Short Circuit Protection of Silicon Carbide MOSFETs: Challenges, Methods, and Prospects;IEEE Transactions on Power Electronics;2024-10

2. Review on Short-Circuit Protection Methods for SiC MOSFETs;Energies;2024-09-09

3. Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs;Solid State Phenomena;2024-08-21

4. Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃;Applied Physics Express;2024-08-01

5. A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations;IEEE Electron Device Letters;2024-08