Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Published:2015-08 Issue:8 Volume:62 Page:2562-2570
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Uhnevionak Viktoryia¹,Burenkov Alexander¹,Strenger Christian¹,Ortiz Guillermo²,Bedel-Pereira Elena²,Mortet Vincent³,Cristiano Fuccio²,Bauer Anton J.¹,Pichler Peter¹^ORCID

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany

2. Laboratoire d’Analyse et d’Architecture des Systèmes–Centre National de la Recherche Scientifique, Toulouse, France

3. Academy of Sciences of the Czech Republic, Prague, Czech Republic

Funder

Program Inter Carnot Fraunhofer

Bundesministerium für Bildung und Forschung

Agence Nationale de la Recherche, as well as by the RENATECH French National Nanofabrication Network

Academy of Sciences of the Czech Republic via the J. E. Purkyně Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7163647/07163690.pdf?arnumber=7163690

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