Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3693579
Reference42 articles.
1. Structure and electronic properties of InN and In-rich group III-nitride alloys
2. When group-III nitrides go infrared: New properties and perspectives
3. Characterization of Bulk Semiconductors Using Raman Spectroscopy
4. Properties of GaN and related compounds studied by means of Raman scattering
5. Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
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2. Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface;Materials Science in Semiconductor Processing;2022-11
3. Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation;Physical Chemistry Chemical Physics;2022
4. Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN;Journal of Applied Physics;2021-11-28
5. Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering;Applied Physics Letters;2021-04-19
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