Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN-Reference-Cited by-同舟云学术

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Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN

Published:2021-11-28 Issue:20 Volume:130 Page:205706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Katsikini M.¹^ORCID,Filintoglou K.¹^ORCID,Pinakidou F.¹,Pliatsikas N.¹,Arvanitidis J.¹,Christofilos D.²,Paloura E. C.¹,Ves S.¹^ORCID,Reinholz U.³,Papadomanolaki E.⁴,Iliopoulos E.⁴^ORCID

Affiliation:

1. School of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

2. School of Chemical Engineering, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

3. BAM Federal Institute for Materials Research and Testing, 12200 Berlin, Germany

4. Department of Physics and IESL-FORTH, University of Crete, 70013 Heraklion, Crete, Greece

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0069359

Reference42 articles.

1. The Evolution of Nitride Semiconductors

2. Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

3. Solid phase immiscibility in GaInN

4. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy

5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

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1. Wide bandgap semiconductor materials and devices;Journal of Applied Physics;2022-06-21

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