Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering
Author:
Affiliation:
1. Institute of Solid State Physics, Technische Universität Berlin, Hardenberstraße 36, 10623 Berlin, Germany
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0040760
Reference36 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
3. InGaN/GaN multiple quantum well concentrator solar cells
4. Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion
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1. Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering;Journal of Applied Physics;2023-03-01
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