Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates-Reference-Cited by-同舟云学术

Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates

Published:2017-08-28 Issue:8 Volume:122 Page:084504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Qi Weijing¹,Zhang Jianli¹,Mo Chunlan¹,Wang Xiaolan¹,Wu Xiaoming¹,Quan Zhijue¹,Wang Guangxu¹,Pan Shuan¹,Fang Fang¹,Liu Junlin¹,Jiang Fengyi¹

Affiliation:

1. National Institute of LED on Si Substrate, Nanchang University, Nanchang 330096, China

Funder

National Key Research and Development Programm of China

National key Research and Development Programm of China

State Key Program of the National Natural Science of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000134

Reference41 articles.

1. Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

2. Uniform illumination design by configuration of LEDs and optimization of LED lens for large-scale color-mixing applications

3. R.J. Xie and N. Hirosaki , in III-Nitride Based Light Emitting Diodes and Applications ( Springer, The Netherlands, 2013), pp. 291–326.

4. White light emitting diodes with super-high luminous efficacy

5. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

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