Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination-Reference-Cited by-同舟云学术

Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination

Published:2017-08-28 Issue:8 Volume:122 Page:085307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ali Deeb Manal¹^ORCID,Ledig Johannes¹²³,Wei Jiandong⁴,Wang Xue⁵,Wehmann Hergo-Heinrich¹²^ORCID,Waag Andreas¹²

Affiliation:

1. Institut für Halbleitertechnik and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, 38092 Braunschweig, Germany

2. Epitaxy competence center ec2, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany

3. Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig, Germany

4. Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 200444, People's Republic of China

5. Osram Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany

Funder

EU project (GECCO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000137

Reference43 articles.

1. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

2. The nanorod approach: GaN NanoLEDs for solid state lighting

3. Visible-Color-Tunable Light-Emitting Diodes

4. GaN based nanorods for solid state lighting

5. Group III nitride core-shell nano- and microrods for optoelectronic applications

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