Direct measurement of surface photovoltage by AC bias Kelvin probe force microscopy

Abstract

Surface photovoltage (SPV) measurements are a crucial way of investigating optoelectronic and photocatalytic semiconductors. The local SPV is generally measured consecutively by Kelvin probe force microscopy (KPFM) in darkness and under illumination, in which thermal drift degrades spatial and energy resolutions. In this study, we propose the method of AC bias Kelvin probe force microscopy (AC-KPFM), which controls the AC bias to nullify the modulated signal. We succeeded in directly measuring the local SPV by AC-KPFM with higher resolution, thanks to the exclusion of the thermal drift. We found that AC-KPFM can achieve a SPV response faster by about one to eight orders of magnitude than classical KPFM. Moreover, AC-KPFM is applicable in both amplitude modulation and frequency modulation mode. Thus, it contributes to advancing SPV measurements in various environments, such as vacuum, air, and liquids. This method can be utilized for direct measurements of changes in surface potential induced by modulated external disturbances.