Effects of tunneling ona‐Si:H Schottky barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339335
Reference17 articles.
1. Internal photoemission in hydrogenated amorphous‐Si films
2. Observation of two modes of current transport through phosphorus‐doped amorphous hydrogenated silicon Schottky barriers
3. Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling
4. Implications of recent density-of-states measurements for optical and transport properties of a-Si:H
5. Measurements of depletion layers in hydrogenated amorphous silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. II. Reverse‐bias current mechanism;Journal of Applied Physics;1993-08-15
2. On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. I. Zero bias barrier heights and current transport mechanism;Journal of Applied Physics;1993-08-15
3. Internally detected electron photoexcitation spectroscopy on heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-07
4. Scattering Effects on Resonant Tunneling Structures;Resonant Tunneling in Semiconductors;1991
5. The Movement of Mobility Edges in Hydrogenated Amorphous Silicon;MRS Proceedings;1990
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