On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. I. Zero bias barrier heights and current transport mechanism
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354670
Reference33 articles.
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5. On the current‐voltage characteristics of amorphous hydrogenated silicon Schottky diodes
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3. Reverse current instabilities in amorphous silicon Schottky diodes: modeling and experiments;IEEE Transactions on Electron Devices;1999-07
4. Relation for the nonequilibrium population of the interface states: Effects on the bias dependence of the ideality factor;Journal of Applied Physics;1997-03-15
5. Time Dependence of the Reverse Current in Amorphous Silicon Schottky Diodes;MRS Proceedings;1997
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