Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.6936/fulltext
Reference22 articles.
1. Interface kinetics at metal contacts on a-Si:H
2. Field and thermionic-field emission in Schottky barriers
3. Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers
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