Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363348
Reference23 articles.
1. Sintered ohmic contacts to n-and p-type GaAs
2. Low‐temperature sintering of Pd/Ge films on GaAs
3. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy
4. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
5. Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme
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2. Characterization of low-resistance ohmic contacts to n- and p-type InGaAs;Journal of Applied Physics;2013-07-28
3. Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs;Journal of Applied Physics;2012-09
4. The influence of surface cleaning on the stability of Pd/GaAs contacts;Journal of Materials Science: Materials in Electronics;2001
5. Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties;Journal of Electronic Materials;2000-07
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