Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties-Reference-Cited by-同舟云学术

Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties

Published:2000-07 Issue:7 Volume:29 Page:964-972
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Ressel P.,Hao P. H.,Park M. H.,Yang Z. C.,Wang L. C.,Österle W.,Kurpas P.,Richter E.,Kuphal E.,Hartnagel H. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-000-0189-y.pdf

Reference28 articles.

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