Vibrational and electron-phonon coupling properties of β-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA
Funder
National Science Foundation
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5055238
Reference54 articles.
1. Guest Editorial: The dawn of gallium oxide microelectronics
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4. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
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