Anisotropic thermal expansion tensor of β -Ga2O3 and its critical role in casting-grown crystal cracking

Author:

Yan Yuchao12ORCID,Wu Dan23,Xia Ning3ORCID,Deng Tianqi12ORCID,Zhang Hui12ORCID,Yang Deren12ORCID

Affiliation:

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310027, China

2. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University 2 , Hangzhou, Zhejiang 311200, China

3. Hangzhou Garen Semiconductor Company Limited 3 , Hangzhou, Zhejiang 311200, China

Abstract

Thermal expansion tensor represents a key parameter for the numerical modeling of the crystal growth process. However, the modeling of β-Ga2O3 commonly utilizes one single thermal expansion constant that misses its anisotropic nature and temperature-dependent characteristics. Herein, we addressed this limitation by calibrating an anisotropic, temperature-dependent thermal expansion tensor using the experimental lattice parameters of β-Ga2O3 up to 1200 K. We found that COMSOL Multiphysics simulations employing the calibrated tensor yield stress distribution remarkably distinct from those relying on the commonly assumed constants. Specifically, our simulations predict a von Mises stress concentration near the crystal bottom, which explains the experimentally observed crack formation at corresponding locations. This contrasts with the simulations using the single-value thermal expansion constant, which fails to predict such stress concentration. The physical origin of crystal cracking is found to be rooted in the compressive force exerted by the iridium crucible during the cooling process. Our findings suggest that the physical anisotropy of β-Ga2O3 should be carefully considered in modeling and simulation. With the calibrated thermal expansion tensor, we provide a validated set of thermomechanical parameters for reliable β-Ga2O3 crystal growth simulations.

Publisher

AIP Publishing

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