Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1396631
Reference17 articles.
1. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
2. Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure
3. Pressure dependence of optical transitions inIn0.15Ga0.85N/GaNmultiple quantum wells
4. InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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