Author:
Bhatt Piyush,Chaudhuri Krishnakali,Kothari Shraddha,Nainani Aneesh,Lodha Saurabh
Subject
Physics and Astronomy (miscellaneous)
Reference17 articles.
1. R. Pillarisetty, B. Chu-Kung, S. Corcoran, G. Dewey, J. Kavalieros, H. Kennel, R. Kotlyar, V. Le, D. Lionberger, M. Metz, N. Mukherjee, J. Nah, W. Rachmady, M. Radosavljevic, U. Shah, S. Taft, H. Then, N. Zelick, and R. Chau, in IEEE Conference Proceedings of International Electron Devices Meeting (IEDM) (IEEE, New York, 2010), p. 150.
2. Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
3. High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping
4. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
5. Ge Interface Passivation Techniques and Their Thermal Stability
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