Strong Reduction in Ge Film Reflectivity by an Overlayer of 3 nm Si Nanoparticles: Implications for Photovoltaics-Reference-Cited by-同舟云学术

Strong Reduction in Ge Film Reflectivity by an Overlayer of 3 nm Si Nanoparticles: Implications for Photovoltaics

Published:2021-04-01 Issue:5 Volume:4 Page:4602-4614
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Rezk Ayman¹^ORCID,Hadi Sabina Abdul²^ORCID,Ashraf Juveiriah M.¹^ORCID,Alhammadi Aisha¹,Alnaqbi Wafa¹^ORCID,Kumar Aravindh³^ORCID,Dushaq Ghada⁴^ORCID,Rasras Mahmoud S⁴^ORCID,Saraswat Krishna C.³,Nayfeh Munir⁵,Nayfeh Ammar¹^ORCID

Affiliation:

1. Electrical Engineering and Computer Science, Khalifa University, Abu Dhabi 127788, UAE

2. College of Engineering and IT, University of Dubai, Dubai 14143, UAE

3. Electrical Engineering, Stanford University, Stanford, California 94305, United States

4. Electrical Engineering, New York University Abu Dhabi, Abu Dhabi 129188, UAE

5. Department of Physics, University of Illinois, Champaign, Illinois 61820, United States

Funder

Khalifa University of Science, Technology and Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c00107

Reference74 articles.

1. Near infrared image sensor with integrated germanium photodiodes.

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5. Enhanced quantum efficiency of Ge solar cells by a two-dimensional photonic crystal nanostructured surface

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