Growth and Characterization of SiGe/SiO<sub>2</sub> Core/Shell Nanocrystals on Insulators-Reference-Cited by-同舟云学术

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Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators

Published:2024-05-24 Issue:6 Volume:6 Page:4120-4129
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Aouassa Mansour¹^ORCID,Bouabdellaoui Mohammed²³,Pessoa Walter Batista²,Berbezier Isabelle²^ORCID,Kallel Tarak¹,Ettaghzouti Thouraya¹,Yahyaoui Makram¹,Saron Kamal M.¹,Aladim Abdullah K.¹,Ibrahim Mohammed¹,Althobaiti Ibrahim O.¹

Affiliation:

1. Physics Department, College of Science, Jouf University, P.O. Box 2014, Sakaka 72341, Saudi Arabia

2. CNRS, Aix-Marseille Université, Centrale Marseille, IM2NP, UMR 7334, Campus de St. Jérôme, Marseille 13397, France

3. Laboratory of Physics of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, Hassan II University of Casablanca, 146 Mohammedia, Casablanca, Morocco

Funder

Al Jouf University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00233

Reference34 articles.

1. Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers

2. A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

3. Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

4. High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform

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