Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices-Reference-Cited by-同舟云学术

Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices

Published:2020-02-01 Issue:2 Volume:20 Page:1039-1045
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Mallem Kumar¹,Jagadeesh Chandra S. V.²,Ju Minkyu¹,Dutta Subhajith¹,Ramana CH. V. V.³,Hussain Shahzada Qamar¹,Park Jinjoo¹,Kim Youngkuk¹,Cho Young-Hyun¹,Cho Eun-Chel¹,Yi Junsin¹

Affiliation:

1. Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea

2. Department of Electronics and Communication Engineering, Lakireddy Bali Reddy College of Engineering, Mylavaram 521230, Andhra Pradesh, India

3. Department of Electronic Engineering, Institute for Wearable Convergence Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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