High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong 999077, Hong Kong
2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4979101
Reference45 articles.
1. Structural and electrical characteristics of Ga2O3(Gd2O3)∕GaAs under high temperature annealing
2. Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
3. Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
4. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
5. GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization
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