GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2806190
Reference20 articles.
1. High mobility NMOSFET structure with high-/spl kappa/ dielectric
2. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
3. Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization
4. Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer
5. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
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