Fabrication of n-type 4H–SiC/Ni junctions using electrochemical deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126015
Reference20 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. SiC Power Devices
3. High‐temperature ohmic contact to n‐type 6H‐SiC using nickel
4. Surface Studies on SiC as Related to Contacts
5. The Reliability of Ni Contacts to n-SiC Subjected to Pulsed Thermal Fatigue
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion;Journal of Materials Engineering and Performance;2018-12-06
2. Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC;Materials Science Forum;2018-06
3. Displacement deposition of gold nanoparticles and electroless deposition of nickel films on silicon-carbide (4H-SiC) wafers;Transactions of the IMF;2017-06
4. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure;AIP Advances;2014-04
5. Fabrication of Pores in a Silicon Carbide Wafer by Electrochemical Etching with a Glassy-Carbon Needle Electrode;ACS Applied Materials & Interfaces;2013-03-27
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