Author:
Hou Ruixiang,Li Lei,Fang Xin,Zhao Hui,Chen Yihang,Xie Ziang,Sun Guosheng,Zhang Xinhe,Zhao Yanfei,Huang Rong,Huang Zengli,He Youqin,Ma Nongnong,Zhang Jicai,Xu Wanjing,Yang Jinbo,Xiao Chijie,Qin G. G.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference29 articles.
1. E.M. Handy, M.V. Rao, O.W. Holland, P.H. Chi, K.A. Jones, M.A. Derenge, R.D. Vispute, and T. Venkatesan, Al B and Ga Ion-Implantation Doping of SiC, J. Electron. Mater., 2000, 29, p 1340–1345
2. C.L. Zhu, Rusli, and P. Zhao, Dual-Channel 4H-SiC Metal Semiconductor Field Effect Transistors, Solid-State Electron., 2007, 51, p 343–346
3. B.J. Baliga, Prospects for Development of SiC Power Devices, Inst. Phys. Conf. Ser., 1996, 142, p 1
4. L.V. Rozario, L.P. Sadwick, R.J. Hwu, and D.B. King, SiC BGJFET Inverter for High Temperature/Power Applications, in Proc. of Fourth Int. High Temp. Electron. Conf. (HiTec) (1998), p 29
5. C.E. Weitzel, Silicon Carbide High Frequency Devices, Mater. Sci. Forum, 1998, 264-268, p 907–912
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献